闸极电荷；选通电极充电
gate───vt.给…装大门；n.(Gate)人名；(英)盖特；(法、瑞典)加特；n.大门；出入口；门道
charge───vt.使充电；使承担；指责；装载；对…索费；向…冲去；n.(Charge)人名；(法)沙尔热；(英)查奇；n.费用；电荷；掌管；控告；命令；负载；vi.充电；控告；索价；向前冲；记在账上
gate chalk───门粉笔
la gate───拉门
charge ahead───提前收费；提前充电
charge number───负载量
service charge───n.服务费
sulphates charge───硫酸盐电荷
arrival gate───到达口；下机门
In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.───为了更直观地描述低压大电流VDMOS器件特性，对器件栅电荷特性进行了测量和提取。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.───本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).───碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
the minimum charge sub-sea sharks to switch from each of the minimum gate charge fraction, the default is 10 minutes.───鲨鱼海洋最小押分切换每一门的最小起押分数，默认为10分。
Features: Low gate charge, low crss , fast switch.───特点：低栅电荷，低反馈电容，开关速度快。
Study on a Novel Gate Charge Retention Voltage-Driven Synchronous Rectifier───新型栅极电荷保持驱动同步整流器的研究
Power VITM generation gate charge, high voltage N-Channel enhancement mode power MOSFETs.
The drive circuit adopts gate charge retention(GCR) technology, resolves the dead time of secondary synchronous rectifiers, reduces the loss of them, enhances the efficiency of the converter.
A new type power MOSFET lower on - resistance and gate charge.